maximum ratings: (t c =25c unless otherwise noted) 2n23__ symbol 22 23 24 25 26 27 28 29 units peak repetitive forward voltage v drm 25 50 100 150 200 250 300 400 v peak repetitive reverse voltage v rrm 25 50 100 150 200 250 300 400 v non-repetitive peak reverse voltage v rsm 40 75 150 225 300 350 400 500 v rms on-state current i t(rms) 1.6 a average on-state current (t c =85c) i t(av) 1.0 a peak one cycle surge (t=8.3ms) i tsm 15 a peak gate power p gm 0.10 w average gate power p g(av) 0.01 w peak gate current i gm 0.10 a peak gate voltage v gm 6.0 v junction temperature t j -65 to +125 c storage temperature t stg -65 to +150 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i drm , i rrm rated v drm , v rrm , r gk =1.0k 5.0 a i gt v d =6.0v, r l =100 200 a i h v d =6.0v, r gk =1.0k 2.0 ma v gt v d =6.0v, r l =100 0.8 v v tm i tm =1.0a, tp=380s 1.5 v 2n2322 2n2326 2N2323 2n2327 2n2324 2n2328 2n2325 2n2329 silicon controlled rectifier 1.6 amps, 25 thru 400 volts to-39 case central semiconductor corp. tm r0 (11-december 2008) description: the central semiconductor 2n2322 series types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and control systems. marking: full part number
central semiconductor corp. tm to-39 case - mechanical outline 2n2322 2n2326 2N2323 2n2327 2n2324 2n2328 2n2325 2n2329 silicon controlled rectifier 1.6 amps, 25 thru 400 volts r0 (11-december 2008) lead code: 1) cathode 2) gate 3) anode (case) marking: full part number
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